Local structure and bonding of Er in GaN: A contrast with Er in Si
نویسندگان
چکیده
X-ray absorption measurements from relatively high concentrations of Er ~.0.1 at. %! doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er–N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si. © 2000 American Institute of Physics. @S0003-6951~00!03320-9#
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